SiC promises higher power MOS devices

被引：0

作者：

Baliga, BJ ^{[1
]}

机构：

[1] N Carolina State Univ, Raleigh, NC 27695 USA

来源：

ELECTRONIC DESIGN | 1999年 / 47卷 / 24期

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：27 / 27

页数：1

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