Atomic Layer Deposition of Ruthenium Films from (Ethylcyclopentadienyl)(pyrrolyl)ruthenium and Oxygen

被引：50

作者：

Kukli, Kaupo ^{[1
,2
]}

Kemell, Marianna ^{[1
]}

Puukilainen, Esa ^{[1
]}

Aarik, Jaan ^{[2
]}

Aidla, Aleks ^{[2
]}

Sajavaara, Timo ^{[3
]}

Laitinen, Mikko ^{[3
]}

Tallarida, Massimo ^{[4
]}

Sundqvist, Jonas ^{[5
]}

Ritala, Mikko ^{[1
]}

Leskela, Markku ^{[1
]}

机构：

[1] Univ Helsinki, Dept Chem, FI-00014 Helsinki, Finland

[2] Univ Tartu, Inst Phys, Dept Mat Sci, EE-51014 Tartu, Estonia

[3] Univ Jyvaskyla, Dept Phys, FI-40014 Jyvaskyla, Finland

[4] Brandenburg Tech Univ Cottbus, Dept Phys, D-03046 Cottbus, Germany

[5] Fraunhofer Ctr Nanoelect Technol, D-01099 Dresden, Germany

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 2011年 / 158卷 / 03期

基金：

芬兰科学院;

关键词：

CHEMICAL-VAPOR-DEPOSITION; TIO2; THIN-FILMS; GATE ELECTRODES; RU ELECTRODE; CAPACITOR; GROWTH; ZRO2; TIN; BARRIER; HFO2;

D O I：

10.1149/1.3533387

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Ru films were grown by atomic layer deposition in the temperature range of 275-350 degrees C using (ethylcyclopentadienyl)(pyrrolyl)ruthenium and air or oxygen as precursors on HF-etched Si, SiO2, ZrO2, and TiN substrates. Conformal growth was examined on three-dimensional silicon substrates with 20: 1 aspect ratio. ZrO2 promoted the nucleation of Ru most efficiently compared to other substrates, but the films roughened quickly on ZrO2 with increasing film thickness. The minimum number of cycles required to form continuous and conductive metal layers could be decreased by increasing the length of the oxygen pulse. In order to obtain well-conducting Ru films growth to thicknesses of at least 8-10 nm on any surface was necessary. Resistivities in the ranges of 30-60 and 14-16 mu Omega . cm were achieved for 4-6 and 10-15 nm thick films, respectively. Delamination became an issue in the Ru films grown to thicknesses about 10 nm and higher. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3533387] All rights reserved.

引用

页码：D158 / D165

页数：8

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