Stacked a-Si:H-based three-colour detectors

被引：10
|
作者：
Topic, M
Smole, F
Furlan, J
Kusian, W
机构：
[1] Univ Ljubljana, Fac Elect Engn, SI-1000 Ljubljana, Slovenia
[2] Siemens AG, D-8000 Munchen, Germany
来源：
JOURNAL OF NON-CRYSTALLINE SOLIDS | 1998年 / 227卷
关键词：
amorphous silicon; colour detector; stacked heterostructure; simulation;
D O I：
10.1016/S0022-3093(98)00211-7
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
A new a-Si:H based three colour-detector with the assembly transparent conducting oxide (TCO)/PINIP/TCO/PIN/metal is theoretically and experimentally investigated. This detector assembly overcomes the problems with a thin PIN diode for the detection of the blue colour in the TCO/PIN/TCO/PINIP/metal assembly. The theoretical results demonstrate the advantages of the new detector type. The three colours could be detected with full width half magnitude < 150 nm and colour suppressions of more than three between each colour. Experimentally, the spectral responses show the peak values at the demanded wavelengths, but exhibit an asymmetrical behaviour leading to full width half magnitudes larger than the theoretical prediction. (C) 1998 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：1326 / 1329
页数：4
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