Quantum-well model and the optical absorption edge in structurally nonuniform a-Si:H-based alloys

This paper describes studies of the microstructure and optical absorption edge of films of a-Si:H and a-SiNx:H alloys (x = 0.0-0.72), obtained by decomposing gas mixtures in an rf glow discharge. For the a-Si:H films, the gas mixture was monosilane diluted by hydrogen, for the a-SiNx:H alloys it was SiH4 + NH3. Structurally nonuniform films with "device-quality" optoelectronic characteristics were obtained when the rates of growth were increased (to 8 Angstrom/s). Atomic force microscopy and infrared absorption spectroscopy are used to identify a characteristic feature of the microstructures of these films: the presence of islets similar to 500 Angstrom in diameter, whose boundaries are formed by clusters of hydrogen atoms (in the case of a-Si:H) or of hydrogen and nitrogen (in the case of a-SiNx:H). In this case the optical band gap of a-Si:H (a-SiNx:H) is determined by the concentration of SiH (SiN) bonds in the interior of the islets and is not sensitive to changes in the content of hydrogen (nitrogen) at their boundaries. This result is explained by a quantum-well model which takes into account the characteristic sizes of the microstructures formed by hydrogen or nitrogen atoms. (C) 1998 American Institute of Physics. [S1063-7826(98)00405-0].