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The Hall insulator in 2-dimensional SiGe hole gases

被引：24
|
作者：
Coleridge, PT
Sachrajda, AS
Zawadzki, P
Williams, RL
Lafontaine, H
机构：
[1] Inst. for Microstructural Sciences, National Research Council, Ottawa
来源：
SOLID STATE COMMUNICATIONS | 1997年 / 102卷 / 10期
关键词：
semiconductors; quantum Hall effect; phase transitions;
D O I：
10.1016/S0038-1098(97)00077-X
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Magnetotransport measurements in p-SiGe quantum well samples show that the Landau levels are ferromagnetically polarised at filling factor nu = 2. It is also shown that the insulating phase observed in some samples at nu = 1.5 is suppressed-when the ferromagnetic polarisation persists into the nu = 1 integer quantum Hall state. Similarities and differences between p-SiGe and high mobility Si-MOSFETs are also discussed. Crown copyright (C) 1997 Published by Elsevier Science Ltd.
引用
收藏
页码：755 / 758
页数：4
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