UNIVERSAL DISSIPATIVE RESISTIVITY IN THE FRACTIONAL QUANTUM HALL-EFFECT OF 2-DIMENSIONAL HOLE SYSTEMS

We have investigated the universality of the discovery of Clark et al. in n-type GaAs-AlxGa1-xAs single heterojunctions (SHJ's) that the preexponential factor rho(xx)(c) in activation plots of sample resistivity at fractional quantum Hall effect (FQHE) ground states is constant [Phys. Rev. Lett. 60, 1747 (1888)] by performing a systematic electrical transport investigation of a number of high-quality p-type SHJ's. We find rho(xx)(c)=C(h/p(2)e(2)) for FQHE states at filling factor nu=p/q where C is a constant close to unity, in very good agreement with results reported for n-type SHJ's demonstrating this phenomenon to be a robust and universal property.