Influence of Bonding Atmosphere on Low-Temperature Wafer Bonding

被引：1
|
作者：
Wang, Ying-Hui [1 ]
Suga, Tadatomo [1 ]
机构：
[1] Univ Tokyo, Grad Sch Engn, Dept Precis Engn, Bunkyo Ku, Tokyo 1138656, Japan
来源：
2010 PROCEEDINGS 60TH ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE (ECTC) | 2010年
关键词：
SURFACE ACTIVATION METHOD; ROOM-TEMPERATURE; SILICON; INTERFACES;
D O I：
10.1109/ECTC.2010.5490936
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The influence of bonding atmosphere was investigated for the wafer bonding at 25 similar to 200 degrees C using a surface activated bonding method. The results of the analysis of activated Si surfaces under different vacuum background and the residual gases in vacuum before and after Ar fast atom beam irradiation is reported. Based on the analysis, bonding of Si wafers in nitrogen atmosphere is demonstrated with showing the effect of the timing of nitrogen introduction into the bonding chamber. The bonding energy of the bonded Si-Si wafer may reach 2 J/m(2) under the vacuum pressure of 5x10(-5) Pa and N-2 atmosphere by controlling the exposure time and the residual gas of water to less than 5x10(-4) Pa.s. Using Au or Cu thin-films can reduce the influence of bonding atmosphere. Bond interfaces with few voids can be achieved, which is benefit on diffusion and plastic deformation of the Au or Cu thin-films.
引用
收藏
页码：435 / 439
页数：5
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