Advanced process control for polysilicon gate etching using integrated optical CD metrology

被引：8

作者：

Kota, GP ^{[1
]}

Luque, J ^{[1
]}

Vahedi, V ^{[1
]}

Khathuria, A ^{[1
]}

Dziura, T ^{[1
]}

Levy, A ^{[1
]}

机构：

[1] Lam Res Corp, Fremont, CA 94538 USA

来源：

ADVANCED PROCESS CONTROL AND AUTOMATION | 2003年 / 5044卷

关键词：

APC; process control; etch; scatterometry; integrated metrology;

D O I：

10.1117/12.487635

中图分类号：

TP [自动化技术、计算机技术];

学科分类号：

0812 ;

摘要：

Advanced integrated metrology capability is actively being pursued in several process areas, including etch, to shorten process cycle times, enable wafer-level advanced process control (APC), and improve productivity. In this study, KLA-Tencor's scatterometry-based iSpectra Spectroscopic CD was integrated on a Lam 2300 Versys Star(TM) silicon etch system. Feed-forward control techniques were used to reduce critical dimension (CD) variation. Pre-etch CD measurements were sent to the etch system to modify the trim time and achieve targeted CDs. CDs were brought to within 1 run from a starting CD spread of 25 nm, showing the effectiveness of this process control approach together with the advantages of spectroscopic CD metrology over conventional CD measurement techniques.

引用

页码：90 / 96

页数：7

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