DC and transient performance of 4H-SiC double-implant MOSFETs

被引：12

作者：

Losee, Pete A. ^{[1
]}

Matocha, Kevin ^{[1
]}

Arthur, Stephen D. ^{[1
]}

Nasadoski, Jeffrey ^{[1
]}

Stum, Zachary ^{[2
,3
]}

Garrett, Jerome L. ^{[1
]}

Schutten, Michael ^{[4
]}

Dunne, Greg ^{[1
]}

Stevanovic, Ljubisa

机构：

[1] GE Global Res, Semicond Technol Lab, Niskayuna, NY 12309 USA

[2] GE Global Res, Micro & Nano Proc Dev Lab, Niskayuna, NY 12309 USA

[3] Rensselaer Polytech Inst, Troy, NY 12180 USA

[4] GE Global Res, Elect Power Convers Lab, Niskayuna, NY 12309 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2008年 / 55卷 / 08期

关键词：

body diode; DMOSFET; inductive switching; SiC MOSFET;

D O I：

10.1109/TED.2008.926592

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

SiC vertical MOSFETs were fabricated and characterized, achieving blocking voltages around I kV and specific on-resistances as low as Rsp,ON = 8.3 mQ - cm'. DC and transient characteristics are shown. Room and elevated temperature (up to 200 'Q 60OV/5A inductive switching performance of the SiC MOSFETs are shown with turn-on and turn-off transients of approximately 20-40 ns.

引用

页码：1824 / 1829

页数：6

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