Cryogenic and High Temperature Performance of 4H-SiC Power MOSFETs

被引：0

作者：

Chen, Sizhe ^{[1
]}

Cai, Chaofeng ^{[1
]}

Wang, Tao ^{[1
]}

Guo, Qing ^{[1
]}

Sheng, Kuang ^{[1
]}

机构：

[1] Zhejiang Univ, Coll Elect Engn, Hangzhou, Zhejiang, Peoples R China

来源：

2013 TWENTY-EIGHTH ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION (APEC 2013) | 2013年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The electrical performance of 4H-SiC Power MOSFETs is studied at temperatures from 93K to 473K. With the decrease of operation temperature, the threshold voltage is found to increase linearly whereas the on-resistance shows a minimum value within the whole temperature range. The rapid increase of on-resistance at lower temperature is ascribed to the presence of large densities of interface traps at the SiC/SiO2 interface. In addition, the breakdown voltage is also measured down to 93K and found to increase monotonously with temperature. A set of parameters, determining the breakdown voltage of 4H-SiC MOSFET at different temperatures, is put forward in this paper, by fitting the experimental data.

引用

页码：207 / 210

页数：4

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