Investigation of Current Spike Phenomena During Heavy Ion Irradiation of NAND Flash Memories

被引：0
|
作者：
Oldham, Timothy R. [1 ]
Berg, Melanie [2 ]
Friendlich, Mark [2 ]
Wilcox, Ted [2 ]
Seidleck, Christina [2 ]
LaBel, Kenneth A. [3 ]
Irom, Farokh [4 ]
Buchner, Steven P. [5 ]
McMorrow, Dale [5 ]
Mavis, David G. [6 ]
Eaton, Paul H. [6 ]
Castillo, James [6 ]
机构：
[1] Dell Serv Fed Govt Inc, Fairfax, VA 22031 USA
[2] MEI Technol Inc, Houston, TX USA
[3] NASA, Goddard Space Flight Ctr, Greenbelt, MD USA
[4] Jet Prop Lab, Pasadena, CA USA
[5] Naval Res Lab, Washington, DC USA
[6] Micro RDC Inc, Urbana, IL USA
来源：
2011 IEEE RADIATION EFFECTS DATA WORKSHOP (REDW) | 2011年
关键词：
COMMERCIAL NAND;
D O I：
暂无
中图分类号：
O35 [流体力学]; O53 [等离子体物理学];
学科分类号：
070204 ; 080103 ; 080704 ;
摘要：
A series of heavy ion and laser irradiations was performed to investigate previously reported current spikes in flash memories. High current events were observed, however, none matches the previously reported spikes. Plausible mechanisms are discussed.
引用
收藏
页码：152 / 160
页数：9
相关论文
共 50 条
  • [41] Modeling of Charge Loss Mechanisms during the Short Term Retention Operation in 3-D NAND Flash Memories
    Woo, Changbeom
    Lee, Myeongwon
    Kim, Shinkeun
    Park, Jaeyeol
    Choi, Gil-Bok
    Seo, Moon-sik
    Noh, Keum Hwan
    Kang, Myounggon
    Shin, Hyungcheol
    2019 SYMPOSIUM ON VLSI TECHNOLOGY, 2019, : T214 - T215
  • [42] Analysis of Failure Mechanisms During the Long-Term Retention Operation in 3-D NAND Flash Memories
    Kim, Shinkeun
    Lee, Kyunghwan
    Woo, Changbeom
    Hwang, Yuchul
    Shin, Hyungcheol
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2020, 67 (12) : 5472 - 5478
  • [43] An Investigation of Program Disturb Characteristics and Data Pattern Effect in 128G 3D NAND Flash Memories
    Yeh, Yu-Hung
    Shih, Sheng-Hung
    Fu, Jen-Chien
    Lin, Chrong-Jung
    King, Ya-Chin
    2017 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATION (VLSI-TSA), 2017,
  • [44] Oxide Damage Induced Leakage Current Degradation in SiC MOSFETs during Heavy-ion Irradiation
    Zhou, Xintian
    Zhang, Shida
    Jia, Yunpeng
    Hu, Dongqing
    Wu, Yu
    Zhao, Yuanfu
    2021 21ST EUROPEAN CONFERENCE ON RADIATION AND ITS EFFECTS ON COMPONENTS AND SYSTEMS (RADECS), 2021, : 42 - 45
  • [45] Relaxation and charge transport phenomena in polyaniline nanofibers: Swift heavy ion irradiation effects
    Banerjee, Somik
    Kumar, A.
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 2012, 358 (22) : 2990 - 2998
  • [46] Heavy Ion and Proton-Induced Single Event Upset Characteristics of a 3-D NAND Flash Memory
    Chen, Dakai
    Wilcox, Edward
    Ladbury, Raymond L.
    Seidleck, Christina
    Kim, Hak
    Phan, Anthony
    Label, Kenneth A.
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2018, 65 (01) : 19 - 26
  • [47] Enhanced diffusion processes during heavy ion irradiation of glasses
    Arnold, G.
    Battaglin G.
    Della Mea, G.
    De Marchi, G.
    Mazzoldi, P.
    Miotello, A.
    Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 1988, B32 (1-4) : 315 - 317
  • [48] Investigation of Swift heavy ion irradiation effect on Au/CdZnTe/In detector
    Veeramani, Perumal
    Haris, M.
    Sugathan, P.
    Kanjilal, D.
    Asokan, K.
    Babu, S. Moorthy
    2008 IEEE NUCLEAR SCIENCE SYMPOSIUM AND MEDICAL IMAGING CONFERENCE (2008 NSS/MIC), VOLS 1-9, 2009, : 5164 - +
  • [49] Microstructure investigation of damage recovery in SiC by swift heavy ion irradiation
    Wang X.
    Li J.
    Wang J.
    Song J.
    Zhao F.
    Tang H.
    Li B.-S.
    Xiong A.-L.
    Material Design and Processing Communications, 2019, 1 (05):
  • [50] Investigation and Modeling of Z-Interference in Poly-Si Channel-Based 3-D NAND Flash Memories
    Jo, Hyungjun
    Ahn, Sangmin
    Shin, Hyungcheol
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2022, 69 (02) : 543 - 548
12345