Investigation of Current Spike Phenomena During Heavy Ion Irradiation of NAND Flash Memories

被引：0
|
作者：
Oldham, Timothy R. [1 ]
Berg, Melanie [2 ]
Friendlich, Mark [2 ]
Wilcox, Ted [2 ]
Seidleck, Christina [2 ]
LaBel, Kenneth A. [3 ]
Irom, Farokh [4 ]
Buchner, Steven P. [5 ]
McMorrow, Dale [5 ]
Mavis, David G. [6 ]
Eaton, Paul H. [6 ]
Castillo, James [6 ]
机构：
[1] Dell Serv Fed Govt Inc, Fairfax, VA 22031 USA
[2] MEI Technol Inc, Houston, TX USA
[3] NASA, Goddard Space Flight Ctr, Greenbelt, MD USA
[4] Jet Prop Lab, Pasadena, CA USA
[5] Naval Res Lab, Washington, DC USA
[6] Micro RDC Inc, Urbana, IL USA
来源：
2011 IEEE RADIATION EFFECTS DATA WORKSHOP (REDW) | 2011年
关键词：
COMMERCIAL NAND;
D O I：
暂无
中图分类号：
O35 [流体力学]; O53 [等离子体物理学];
学科分类号：
070204 ; 080103 ; 080704 ;
摘要：
A series of heavy ion and laser irradiations was performed to investigate previously reported current spikes in flash memories. High current events were observed, however, none matches the previously reported spikes. Plausible mechanisms are discussed.
引用
收藏
页码：152 / 160
页数：9
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