The Raman spectra of TlInS2xSe2(1-x) layered mixed crystals were studied for a wide composition range (0.25 <= x <= 1) in the frequency region 10-360 cm(-1) at room temperature. The shift of Raman-active phonon frequencies versus mixed crystals composition x were established. The effect of crystal disorder on the line width broadening of three high-frequency Raman-active modes is reported. (C) 2011 Elsevier B.V. All rights reserved.
机构:
College of Electronic Engineering,Guangxi Normal University
Department of Physics,Chengde Teacher's College for NationalitiesCollege of Electronic Engineering,Guangxi Normal University
机构:
Guangxi Normal Univ, Coll Elect Engn, Guilin 541004, Peoples R China
Chengde Teachers Coll Nationalities, Dept Phys, Chengde 067000, Peoples R ChinaGuangxi Normal Univ, Coll Elect Engn, Guilin 541004, Peoples R China
Zheng Wenli
Li Tinghui
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Guangxi Normal Univ, Coll Elect Engn, Guilin 541004, Peoples R ChinaGuangxi Normal Univ, Coll Elect Engn, Guilin 541004, Peoples R China