Compositional dependence of Raman frequencies in SixGe1-x alloys

被引：0
|
作者：
郑文礼 [1 ,2 ]
李廷会 [1 ]
机构：
[1] College of Electronic Engineering,Guangxi Normal University
[2] Department of Physics,Chengde Teacher's College for Nationalities
来源：
Journal of Semiconductors | 2012年 / 33卷 / 11期
基金：
中国国家自然科学基金;
关键词：
Raman spectroscopy; SixGe1-x nanocrystals; DFT calculation;
D O I：
暂无
中图分类号：
TN304 [材料];
学科分类号：
摘要：
Increases in Si content and the calculated Raman spectra acquired from the SixGe1-xalloys reveal that the frequencies of the Ge-Si and Si-Si modes are up-shifted obviously,meanwhile that of the Ge-Ge optical mode is down-shifted,which is strongly dependent on their microstructural changes.The linear decrease and increase caused by their force constant(bond lengths and bond angles) changes,which can be used as a fingerprint to identify the average Si content.The complex microstructural changes induced by increasing Si content can be clearly displayed by Raman spectra transformation.
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页码：1 / 5
页数：5
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