Influence of Nd2O3/SrO additives on sintering characteristics and microwave dielectric properties of (Zr0.8Sn0.2)TiO4 ceramics

被引:4
|
作者
Zhang, Liming [1 ,2 ]
Chang, Yi [1 ,2 ]
Xin, Miao [1 ,2 ]
Ren, Luchao [1 ,2 ]
Luo, Xianfu [1 ,2 ]
Zhou, Hongqing [1 ,2 ]
机构
[1] Nanjing Tech Univ, Coll Mat Sci & Engn, Nanjing 210009, Jiangsu, Peoples R China
[2] Jiangsu Collaborat Innovat Ctr Adv Inorgan Funct, Nanjing 210009, Jiangsu, Peoples R China
关键词
BEHAVIOR; MICROSTRUCTURE; EVOLUTION;
D O I
10.1007/s10854-018-0314-4
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The phase composition, microstructure, densification, microwave dielectric properties and sintering characteristics of (Zr0.8Sn0.2)TiO4 specimens doped with various Nd2O3/SrO additions, synthesized via a conventional solid-stated technology, were comprehensively studied. All samples depicted a single uniform (Zr0.8Sn0.2)TiO4 phase with orthorhombic crystalline structure without secondary phase. After adding Nd2O3/SrO additives, the sintering temperature of ZST ceramics was depressed to 1320 degrees C, while facilitating dielectric performances, as long as they were added in the appropriate amounts (0.3wt% Nd2O3+0.45wt% SrO). It has been found that when the ZST powders ground for 16h sintered at 1320 degrees C for 4h with 0.3wt% Nd2O3 and 0.45wt% SrO, an excellent microwave dielectric performances were generated for sintered ceramics: epsilon(r)=40.61, Qxf=40700GHz (f=5.5GHz) and (f)=-2.57ppm degrees C-1.
引用
收藏
页码:491 / 498
页数:8
相关论文
共 50 条
  • [21] Effect of MgO, BaO and La2O3 additions on microwave dielectric properties of (Zr0.8Sn0.2)TiO4 ceramics
    Qian, Lei
    Zhou, Hongqing
    Jiang, Qinxian
    Ren, Luchao
    Xie, Wentao
    Luo, Xianfu
    Sun, Qinglei
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2016, 27 (06) : 6183 - 6187
  • [22] Effect of CeO2 and Nd2O3 on the Microstructure and Microwave Dielectric Properties of (Zr0.8, Sn0.2)TiO4 Ceramics
    Pamu, D.
    Rao, G. Lakshmi Narayana
    Saravanan, K. Venkata
    Raju, K. C. James
    INTEGRATED FERROELECTRICS, 2010, 117 : 118 - 128
  • [23] Effect of ZnO/Er2O3 addition on microwave properties of (Zr0.8Sn0.2)TiO4 ceramics
    Linzi Wang
    Lixi Wang
    Zhefei Wang
    Baoyu Huang
    Qitu Zhang
    Zhenxiao Fu
    Journal of Materials Science: Materials in Electronics, 2016, 27 : 3929 - 3933
  • [24] Effect of ZnO/Er2O3 addition on microwave properties of (Zr0.8Sn0.2)TiO4 ceramics
    Wang, Linzi
    Wang, Lixi
    Wang, Zhefei
    Huang, Baoyu
    Zhang, Qitu
    Fu, Zhenxiao
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2016, 27 (04) : 3929 - 3933
  • [25] Effects of BaWO4 and MnWO4 on the microwave dielectric properties of (Zr0.8Sn0.2)TiO4 ceramics
    Yoon, KH
    Lee, CH
    Kim, WS
    Kim, ES
    INTEGRATED FERROELECTRICS, 1996, 13 (1-3) : 317 - 325
  • [26] MICROWAVE LOSS QUALITY OF (ZR0.8SN0.2)TIO4
    TAMURA, H
    AMERICAN CERAMIC SOCIETY BULLETIN, 1994, 73 (10): : 92 - 95
  • [27] Effects of CaO and La2O3 doping of (Zr0.8Sn0.2)TiO4 ceramics on the densifying behavior and microwave dielectric properties
    Chen, Bo
    Han, Ling
    Li, Baoyin
    Sun, Xudong
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2017, 28 (13) : 9542 - 9547
  • [28] Effects of the Ba3(VO4)2 additions on microwave dielectric properties of (Zr0.8Sn0.2)TiO4 ceramics
    Zhiyuan Zhang
    Haikui Zhu
    Yan Zhang
    Yuhang Chen
    Zhenxiao Fu
    Kun Huang
    Qitu Zhang
    Journal of Materials Science: Materials in Electronics, 2017, 28 : 2044 - 2048
  • [29] Effects of CaO and La2O3 doping of (Zr0.8Sn0.2)TiO4 ceramics on the densifying behavior and microwave dielectric properties
    Bo Chen
    Ling Han
    Baoyin Li
    Xudong Sun
    Journal of Materials Science: Materials in Electronics, 2017, 28 : 9542 - 9547
  • [30] Effects of the Ba3(VO4)2 additions on microwave dielectric properties of (Zr0.8Sn0.2)TiO4 ceramics
    Zhang, Zhiyuan
    Zhu, Haikui
    Zhang, Yan
    Chen, Yuhang
    Fu, Zhenxiao
    Huang, Kun
    Zhang, Qitu
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2017, 28 (02) : 2044 - 2048