Effects of the Ba3(VO4)2 additions on microwave dielectric properties of (Zr0.8Sn0.2)TiO4 ceramics

被引:5
|
作者
Zhang, Zhiyuan [1 ,2 ]
Zhu, Haikui [1 ,2 ]
Zhang, Yan [1 ,2 ]
Chen, Yuhang [3 ]
Fu, Zhenxiao [4 ]
Huang, Kun [4 ]
Zhang, Qitu [1 ,2 ]
机构
[1] Nanjing Tech Univ, Coll Mat Sci & Engn, Nanjing 210009, Jiangsu, Peoples R China
[2] Jiangsu Collaborat Innovat Ctr Adv Inorgan Funct, Nanjing 210009, Jiangsu, Peoples R China
[3] Nanjing Tech Univ, Coll 2011, Nanjing 210009, Jiangsu, Peoples R China
[4] Guangdong Fenghua Adv Technol Co Ltd, Zhaoqing 526020, Guangdong, Peoples R China
基金
中国国家自然科学基金;
关键词
LOW-TEMPERATURE; COMPOSITE CERAMICS; SINTERING BEHAVIOR;
D O I
10.1007/s10854-016-5765-x
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The effects of the Ba-3(VO4)(2) (BV) additions on the phase composition, microstructures, sintering characteristics and microwave dielectric properties of (Zr-0.8 Sn-0.2)TiO4 (ZST) ceramics are investigated by an X-ray diffractometer, a scanning electron microscope and a network analyzer. The ZST and BV ceramics are all prepared by conventional solid-state method. BV can not only lower the sintering temperatures from 1650 to 1275 degrees C, but also speed up the grain growth of the ZST ceramics. But excessive additives deteriorate the microstructures and comprehensive properties of samples. As a result, ZST ceramics with 0.5 wt% BV can be well sintered at 1275 degrees C for 5 h and exhibit excellent microwave dielectric properties of er = 36.6, Q x f = 46,000 GHz and iota(f) = 1.47 ppm/degrees C.
引用
收藏
页码:2044 / 2048
页数:5
相关论文
共 50 条
  • [1] Effects of the Ba3(VO4)2 additions on microwave dielectric properties of (Zr0.8Sn0.2)TiO4 ceramics
    Zhiyuan Zhang
    Haikui Zhu
    Yan Zhang
    Yuhang Chen
    Zhenxiao Fu
    Kun Huang
    Qitu Zhang
    Journal of Materials Science: Materials in Electronics, 2017, 28 : 2044 - 2048
  • [2] Microwave dielectric properties of (Zr0.8Sn0.2)TiO4 ceramics doped with WO3
    Ahn, YS
    Yoon, KH
    Kim, ES
    FERROELECTRICS, 2001, 257 (1-4) : 123 - 128
  • [3] MICROWAVE DIELECTRIC-PROPERTIES OF (ZR0.8SN0.2)TIO4 CERAMICS WITH PENTAVALENT ADDITIVES
    YOON, KH
    KIM, YS
    KIM, ES
    JOURNAL OF MATERIALS RESEARCH, 1995, 10 (08) : 2085 - 2090
  • [4] Effects of BaWO4 and MnWO4 on the microwave dielectric properties of (Zr0.8Sn0.2)TiO4 ceramics
    Yoon, KH
    Lee, CH
    Kim, WS
    Kim, ES
    INTEGRATED FERROELECTRICS, 1996, 13 (1-3) : 317 - 325
  • [5] Effect of MgO, BaO and La2O3 additions on microwave dielectric properties of (Zr0.8Sn0.2)TiO4 ceramics
    Lei Qian
    Hongqing Zhou
    Qinxian Jiang
    Luchao Ren
    Wentao Xie
    Xianfu Luo
    Qinglei Sun
    Journal of Materials Science: Materials in Electronics, 2016, 27 : 6183 - 6187
  • [6] Effect of MgO, BaO and La2O3 additions on microwave dielectric properties of (Zr0.8Sn0.2)TiO4 ceramics
    Qian, Lei
    Zhou, Hongqing
    Jiang, Qinxian
    Ren, Luchao
    Xie, Wentao
    Luo, Xianfu
    Sun, Qinglei
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2016, 27 (06) : 6183 - 6187
  • [7] Microwave dielectric properties and far infrared reflectivity spectra of the (Zr0.8Sn0.2)TiO4 ceramics with additives
    Kim, Woo Sup
    Kim, Tae Hong
    Kim, Eung Soo
    Yoon, Ki Hyun
    Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers, 1998, 37 (9 B): : 5367 - 5371
  • [8] Effect of Sb2O5 on the microwave dielectric properties of (Zr0.8Sn0.2)TiO4 ceramics
    Ahn, YS
    Yoon, KH
    Kim, ES
    FERROELECTRICS, 2001, 262 (1-4) : 985 - 990
  • [9] Microwave dielectric properties and far infrared reflectivity spectra of the (Zr0.8Sn0.2)TiO4 ceramics with additives
    Kim, WS
    Kim, TH
    Kim, ES
    Yoon, KH
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1998, 37 (9B): : 5367 - 5371
  • [10] MICROWAVE LOSS QUALITY OF (ZR0.8SN0.2)TIO4
    TAMURA, H
    AMERICAN CERAMIC SOCIETY BULLETIN, 1994, 73 (10): : 92 - 95