Ultra High Density Scanning Electrical Probe Phase-Change Memory for Archival Storage

被引：10
|
作者：
Wang, Lei [1 ]
Wright, C. David [2 ]
Shah, Purav [3 ]
Aziz, Mustafa M. [2 ]
Sebastian, Abu [4 ]
Pozidis, Haralampos [4 ]
Pauza, Andrew [5 ]
机构：
[1] Nanchang Hangkong Univ, Nanchang 330063, Peoples R China
[2] Univ Exeter, Exeter EX4 4QF, Devon, England
[3] Middlesex Univ, London NW4 4BT, England
[4] IBM Res Zurich, CH-8803 Ruschlikon, Switzerland
[5] Plarion Ltd, Melbourn SG8 6HB, Herts, England
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2011年 / 50卷 / 09期
关键词：
D O I：
10.1143/JJAP.50.09MD04
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The potential for using probe-based phase-change memories for the future archival storage at densities of around 1 Tbit/in.(2) is investigated using a recording medium comprising a Si/TiN/DLC/GeSbTe/diamond-like carbon (DLC) stack together with a conductive PtSi tip for writing and reading. Both experimental and computational simulation results are presented. The simulations include a physically-realistic threshold switching model, as well as the effects of thermal boundary resistance and electrical contact resistance. The simulated bit size and shape correspond closely to that written experimentally. (C) 2011 The Japan Society of Applied Physics
引用
收藏
页数：2
相关论文
共 50 条
  • [31] Phase-change memory
    Eiichi Kuramochi
    Masaya Notomi
    Nature Photonics, 2015, 9 : 712 - 714
  • [32] KSb5S8:: A wide bandgap phase-change material for ultra high density rewritable information storage
    Kyratsi, T
    Chrissafis, K
    Wachter, J
    Paraskevopoulos, KM
    Kanatzidis, MG
    ADVANCED MATERIALS, 2003, 15 (17) : 1428 - 1431
  • [33] Electrical Behavior of Phase-Change Memory Cells Based on GeTe
    Perniola, Luca
    Sousa, Veronique
    Fantini, Andrea
    Arbaoui, Edrisse
    Bastard, Audrey
    Armand, Marilyn
    Fargeix, Alain
    Jahan, Carine
    Nodin, Jean-Francois
    Persico, Alain
    Blachier, Denis
    Toffoli, Alain
    Loubriat, Sebastien
    Gourvest, Emanuel
    Beneventi, Giovanni Betti
    Feldis, Helene
    Maitrejean, Sylvain
    Lhostis, Sandrine
    Roule, Anne
    Cueto, Olga
    Reimbold, Gilles
    Poupinet, Ludovic
    Billon, Thierry
    De Salvo, Barbara
    Bensahel, Daniel
    Mazoyer, Pascale
    Annunziata, Roberto
    Zuliani, Paola
    Boulanger, Fabien
    IEEE ELECTRON DEVICE LETTERS, 2010, 31 (05) : 488 - 490
  • [34] An electrical simulation model for the chalcogenide phase-change memory cell
    Salamon, D
    Cockburn, BF
    RECORDS OF THE 2003 INTERNATIONAL WORKSHOP ON MEMORY TECHNOLOGY, DESIGN AND TESTING, 2003, : 86 - 91
  • [35] Thermal and Electrical Characterization of Materials for Phase-Change Memory Cells
    Fallica, Roberto
    Battaglia, Jean-Luc
    Cocco, Simone
    Monguzzi, Cristiano
    Teren, Andrew
    Wiemer, Claudia
    Varesi, Enrico
    Cecchini, Raimondo
    Gotti, Andrea
    Fanciulli, Marco
    JOURNAL OF CHEMICAL AND ENGINEERING DATA, 2009, 54 (06): : 1698 - 1701
  • [36] Multilevel storage in lateral phase-change memory by promotion of nanocrystallization
    Yin, You
    Hosaka, Sumio
    MICROELECTRONIC ENGINEERING, 2011, 88 (08) : 2794 - 2796
  • [37] AN ELECTRICAL STORAGE HEATER USING THE PHASE-CHANGE METHOD OF HEAT-STORAGE
    FARID, MM
    HUSIAN, RM
    ENERGY CONVERSION AND MANAGEMENT, 1990, 30 (03) : 219 - 230
  • [38] OPTICAL MEMORY Phase-change memory
    Kuramochi, Eiichi
    Notomi, Masaya
    NATURE PHOTONICS, 2015, 9 (11) : 712 - 714
  • [39] Terabit-per-square-inch data storage using phase-change media and scanning electrical nanoprobes
    Wright, CD
    Armand, M
    Aziz, MM
    IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2006, 5 (01) : 50 - 61
  • [40] Observation of recording pits on phase-change film using a scanning probe microscope
    Nishimura, T
    Iyoki, M
    Sadayama, S
    ULTRAMICROSCOPY, 2002, 91 (1-4) : 119 - 126
12345