Ultra High Density Scanning Electrical Probe Phase-Change Memory for Archival Storage

被引：10

作者：

Wang, Lei ^{[1
]}

Wright, C. David ^{[2
]}

Shah, Purav ^{[3
]}

Aziz, Mustafa M. ^{[2
]}

Sebastian, Abu ^{[4
]}

Pozidis, Haralampos ^{[4
]}

Pauza, Andrew ^{[5
]}

机构：

[1] Nanchang Hangkong Univ, Nanchang 330063, Peoples R China

[2] Univ Exeter, Exeter EX4 4QF, Devon, England

[3] Middlesex Univ, London NW4 4BT, England

[4] IBM Res Zurich, CH-8803 Ruschlikon, Switzerland

[5] Plarion Ltd, Melbourn SG8 6HB, Herts, England

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2011年 / 50卷 / 09期

关键词：

D O I：

10.1143/JJAP.50.09MD04

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The potential for using probe-based phase-change memories for the future archival storage at densities of around 1 Tbit/in.(2) is investigated using a recording medium comprising a Si/TiN/DLC/GeSbTe/diamond-like carbon (DLC) stack together with a conductive PtSi tip for writing and reading. Both experimental and computational simulation results are presented. The simulations include a physically-realistic threshold switching model, as well as the effects of thermal boundary resistance and electrical contact resistance. The simulated bit size and shape correspond closely to that written experimentally. (C) 2011 The Japan Society of Applied Physics

引用

页数：2

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