A multi-scale approach for performance assessment of hydrogenated graphene Field-Effect Transistors

被引：0

作者：

Fiori, G. ^{[1
]}

Lebegue, S. ^{[2
]}

Betti, A. ^{[1
]}

Michetti, P. ^{[3
]}

Klintenberg, M. ^{[4
]}

Eriksson, O. ^{[4
]}

Iannaccone, G. ^{[1
]}

机构：

[1] Univ Pisa, Dipartimento Ingn Informaz, Via Caruso 16, I-56122 Pisa, Italy

[2] Univ Nancy, Inst Jean Barriol, F-54506 Vandoeuvre Les Nancy, France

[3] Inst Theoret Phys & Astrophys, D-97074 Wurzburg, Germany

[4] Uppsala Univ, Dept Phys & Astron, SE-75120 Uppsala, Sweden

来源：

2010 14TH INTERNATIONAL WORKSHOP ON COMPUTATIONAL ELECTRONICS (IWCE 2010) | 2010年

基金：

瑞典研究理事会;

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Performance analysis of Field Effect Transistors based on hydrogenated graphene is performed through a multi-scale approach based on calculations of the energy bands by means of GW approximation, a three-nearest neighbor (3NN) sp 3 tight-binding Hamiltonian, and a ballistic transport model. The considered device exhibits large I-on and I-on / I-off ratios, due to the large bandgap, with reduced lithographic constrains as compared to one-dimensional channels.

引用

页码：299 / 302

页数：4

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