Tailoring electronic properties of 2D crystals by strain engineering

被引：0
|
作者：
Pereira, V. [1 ,2 ]
机构：
[1] Natl Univ Singapore, Graphene Res Ctr, Singapore, Singapore
[2] Natl Univ Singapore, Dept Phys, Singapore, Singapore
来源：
ACTA CRYSTALLOGRAPHICA A-FOUNDATION AND ADVANCES | 2014年 / 70卷
关键词：
Graphene; Strain;
D O I：
10.1107/S2053273314098076
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
MS12.O01
引用
收藏
页码：C192 / C192
页数：1
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