Tailoring electronic properties of 2D crystals by strain engineering

被引:0
|
作者
Pereira, V. [1 ,2 ]
机构
[1] Natl Univ Singapore, Graphene Res Ctr, Singapore, Singapore
[2] Natl Univ Singapore, Dept Phys, Singapore, Singapore
关键词
Graphene; Strain;
D O I
10.1107/S2053273314098076
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
MS12.O01
引用
收藏
页码:C192 / C192
页数:1
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