Vibrational properties and structure of undoped and Al-doped ZnO films deposited by RF magnetron sputtering

被引:232
|
作者
Tzolov, M
Tzenov, N
Dimova-Malinovska, D
Kalitzova, M
Pizzuto, C
Vitali, G
Zollo, G
Ivanov, I
机构
[1] Bulgarian Acad Sci, Cent Lab Solar Energy & New Energy Sources, BU-1784 Sofia, Bulgaria
[2] Bulgarian Acad Sci, Inst Solid State Phys, BU-1784 Sofia, Bulgaria
[3] Univ Roma La Sapienza, I-00161 Rome, Italy
[4] INFM, I-00161 Rome, Italy
[5] Linkoping Univ, IFM, Fys Huset, S-58183 Linkoping, Sweden
关键词
sputtering; zinc oxide; Raman scattering; infrared spectroscopy;
D O I
10.1016/S0040-6090(00)01413-9
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Highly conductive and transparent in the visible range Al-doped ZnO (ZnO:Al) and undoped ZnO films have been deposited by RF magnetron sputtering. Reflection high-energy electron diffraction observations characterized them as textured. The habitus of the microcrystallites forming the texture depends on the Al doping. The layer texture of undoped ZnO films has texture axis parallel to the substrate. The ZnO:Al films, instead, show a columnar texture with texture axis perpendicular to the substrate. The Raman spectra of the films obtained by non-resonant excitation are completely different from those of the target material which is polycrystalline ZnO. For the interpretation of the different bands in the Raman spectra the existence of a depletion region near the grain boundaries has been assumed. The most intensive band in the Raman spectra at approximately 570 cm(-1) has been assigned to electric field-induced Raman scattering on longitudinal optical phonons. The built-in electric field in the depletion region induces the Raman activity of the B-2 modes and a band at 276 cm(-1) appears in the spectra. Phonon modes highly localized near the grain boundaries have been detected at 516 cm(-1) and 468 cm(-1) which are well pronounced in the Raman spectra for the doped samples. Localized modes were observed also in the infrared reflection spectra of the doped films. Surface enhanced Raman scattering has been applied and the band in the range 830-920 cm(-1) has been interpreted as due to adsorbates from the ambient air. It has been shown that the non-resonant Raman scattering can be used for qualitative study of some details of the microstructure of the zinc oxide films Like the built-in electric field and the adsorbates in the films. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:28 / 36
页数:9
相关论文
共 50 条
  • [1] Improved physical properties of Al-doped ZnO thin films deposited by unbalanced RF magnetron sputtering
    Sreedhar, Adem
    Kwon, Jin Hyuk
    Yi, Jonghoon
    Gwag, Jin Seog
    [J]. CERAMICS INTERNATIONAL, 2016, 42 (13) : 14456 - 14462
  • [2] Effects of in situ annealing on the properties of Al-doped ZnO thin films deposited by RF magnetron sputtering
    Kim, Deok-Kyu
    Park, Choon-Bae
    [J]. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2014, 25 (04) : 1589 - 1595
  • [3] Effects of in situ annealing on the properties of Al-doped ZnO thin films deposited by RF magnetron sputtering
    Deok-Kyu Kim
    Choon-Bae Park
    [J]. Journal of Materials Science: Materials in Electronics, 2014, 25 : 1589 - 1595
  • [4] Influence of thickness on the structural, electrical and optical properties of Al-doped ZnO films deposited by RF magnetron sputtering
    Chen, Jian
    Sun, Yihua
    Sun, Xiaohua
    Huang, Caihua
    [J]. ADVANCES IN TEXTILE ENGINEERING AND MATERIALS III, PTS 1 AND 2, 2013, 821-822 : 845 - 848
  • [5] Erratum to: Effects of in situ annealing on the properties of Al-doped ZnO thin films deposited by RF magnetron sputtering
    Deok-Kyu Kim
    Choon-Bae Park
    [J]. Journal of Materials Science: Materials in Electronics, 2014, 25 (4) : 1596 - 1596
  • [6] Effect of substrate temperature on the properties of Al-doped ZnO films by RF magnetron sputtering
    Wu, Yue-Bo
    Lei, Sheng
    Wang, Zhe
    Zhao, Ru-Hai
    Huang, Lei
    Li, Hui
    [J]. OPTOELECTRONIC MATERIALS, PTS 1AND 2, 2010, 663-665 : 1293 - +
  • [7] Structural and optical properties of Al-doped ZnO films coated by RF magnetron sputtering
    Wu, Yue-Bo
    Huang, Bo
    Zhang, Liang-Tang
    Li, Jing
    Wu, Sun-Tao
    [J]. 3RD INTERNATIONAL SYMPOSIUM ON ADVANCED OPTICAL MANUFACTURING AND TESTING TECHNOLOGIES: OPTICAL TEST AND MEASUREMENT TECHNOLOGY AND EQUIPMENT, PARTS 1-3, 2007, 6723
  • [8] Al-doped ZnO films deposited by magnetron sputtering: effect of sputtering parameters on the electrical and optical properties
    Pan, Qingtao
    Song, Xin
    [J]. MATERIALS SCIENCE-POLAND, 2017, 35 (02): : 374 - 381
  • [9] Investigation of the Properties of Al-doped ZnO Thin Films with Sputtering Pressure Deposition by RF Magnetron Sputtering
    Shuai, Weiqiang
    Hu, Yuehui
    Chen, Yichuan
    Tong, Fan
    Lao, Zixuan
    [J]. PROCEEDINGS OF THE 7TH INTERNATIONAL CONFERENCE ON EDUCATION, MANAGEMENT, INFORMATION AND MECHANICAL ENGINEERING (EMIM 2017), 2017, 76 : 1789 - 1792
  • [10] Electrical and optical properties of Al-doped ZnO-SnO2 thin films deposited by RF magnetron sputtering
    Satoh, Kazuo
    Kakehi, Yoshiharu
    Okamoto, Akio
    Murakami, Shuichi
    Moriwaki, Kousuke
    Yotsuya, Tsutom
    [J]. THIN SOLID FILMS, 2008, 516 (17) : 5814 - 5817