Influence of thickness on the structural, electrical and optical properties of Al-doped ZnO films deposited by RF magnetron sputtering

被引:0
|
作者
Chen, Jian [1 ]
Sun, Yihua [1 ]
Sun, Xiaohua [1 ]
Huang, Caihua [1 ]
机构
[1] China Three Gorges Univ, Coll Mech & Mat Engn, Yichang 443002, Peoples R China
关键词
Al-doped ZnO; Magnetron sputtering; Film thickness; Transparent conducting oxide; THIN-FILMS; FABRICATION;
D O I
10.4028/www.scientific.net/AMR.821-822.845
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Transparent conducting aluminum-doped zinc oxide (AZO) films with different film thickness had been prepared on soda-lime glass substrates by radio frequency magnetron sputtering using a high density ceramic target. The structural, morphology, electrical, and optical properties of the AZO thin films were investigated by X-ray diffraction, scanning electron microscope, Hall-effect measurement and optical transmission spectroscopy, which were strongly influenced by film thickness. With the film thickness increasing from 140 nm to 710 nm, the resistivity decreases from 9.78 x 10(-3) to 3.23 x 10(-3) Omega.cm and an average optical transmission decreases from 88% to 80% in the visible range and the optical bandgap decreases from 3.47 to 3.24 eV.
引用
收藏
页码:845 / 848
页数:4
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