Analysis Structural Modification and Optical-Electrical Properties of Al-Doped ZnO Oxide Films Deposited by Magnetron Sputtering

This study aims to assess structural, optical, and electrical properties of AZO thin films produced by magnetron sputtering in high pressure were 12, 7, and 5 cm apart between the target and the glass substrate. Then, a treatment current variation (0.1, 0.2, and 0.3 A) was performed for the fixed position of 5.0 cm away. Characterization techniques such as XRD, SEM, and EDS were used to investigate the structural changes and composition of the deposited films. Besides, spectrophotometry enabled an analysis of the optical constants, and the four-point probe assay was used to measure the film electrical resistance. The results showed that the approximation between the target/substrate, and the increase in current from 0.1 to 0.3 A, produces an increase in crystallinity, grain size, and film thickness. These factors promote a reduction in transmittance, bandgap energy, and electrical resistivity. Sample A503 (5.0 cm and 0.3 A) showed the best electrical properties (2.18 x 10(1 )omega.cm) in view of the set of parameters adopted in this work.