Formation of InAs1-xSbx quantum dots on vicincal InP(001) for 1.55-μm DFB laser applications

被引：0
|
作者：
Kawaguchi, Kenichi [1 ,2 ]
Matsuda, Manabu [1 ]
Ekawa, Mitsuru [1 ]
Yamamoto, Tsuyoshi [1 ]
Kuwatsuka, Haruhiko [1 ,2 ]
Sugawara, Mitsuru [1 ,3 ]
Arakawa, Yasuhiko [1 ,4 ,5 ]
机构：
[1] Fujitsu Labs Ltd, Nanotechnol Res Ctr, Kanagawa 2430197, Japan
[2] Fujitsu Ltd, Kanagawa 2430197, Japan
[3] QD Laser Inc, Chiyoda Ku, Tokyo 1020073, Japan
[4] Univ Tokyo, Inst Ind Sci, Meguro Ku, Tokyo 1538505, Japan
[5] Univ Tokyo, Adv Sci & Technol Res Ctr, Meguro Ku, Tokyo 1538505, Japan
来源：
JOURNAL OF CRYSTAL GROWTH | 2008年 / 310卷 / 12期
关键词：
low dimensional structures; metalorganic vapor phase epitaxy; semiconducting III-V materials; laser diodes;
D O I：
10.1016/j.jcrysgro.2008.02.025
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
We have investigated the MOVPE growth of InAs1-xSbx quantum dots (QDs) on vicinal InP(0 0 1) substrate for DFB laser applications. Miscut orientation was adopted toward the [110] direction in which InAsSb quantum wires elongate on normal InP(0 0 1) substrate. The interval between the QDs and the lateral size of the QDs in the [1 1 0] direction decreased as the Sb fraction was increased, which brought the density to as high as 1.1 x 10(11) cm(-2) of InAsSb QDs. The InAsSb QDs were stacked with 30-nm-thick InGaAsP spacer layers for 10 periods without correlation, and had an emission of a wavelength at around 1.55 mu m although the segregation of Sb atoms was slightly observed, A pn-buried-heterostructure-type DFB laser with InAsSb-QD active layer was fabricated. The lasing wavelength was 1540.6 nm at 25 degrees C, and CW, single-mode lasing operation was demonstrated up to 100 degrees C. (c) 2008 Elsevier B.V. All rights reserved.
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收藏
页码：2999 / 3003
页数：5
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