RHEED investigation of the formation process of InAs quantum dots on (100) InAlAs/InP for application to photonic devices in the 1.55 μm range

被引：23

作者：

Koo, BH ^{[1
]}

Hanada, T ^{[1
]}

Makino, H ^{[1
]}

Chang, JH ^{[1
]}

Yao, T ^{[1
]}

机构：

[1] Tohoku Univ, Inst Mat Res, Yao Lab, Aoba Ku, Sendai, Miyagi 9808577, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2001年 / 229卷 / 01期

关键词：

nanostructures; molecular beam epitaxy; semiconducting III-V materials;

D O I：

10.1016/S0022-0248(01)01109-5

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Self-assembled InAs quantum dots (QDs) on In0.52Al0.48As lattice matched to (1 0 0) InP substrates were grown by solid-source molecular beam epitaxy. We present in situ reflection high-energy electron diffraction studies of the initial growth processes and strain relaxation behaviors of the InAs QDs. The growth process of an InAs layer at the initial stage is clearly divided into two-dimensional (2D) growth and QD formation. It was found that the critical thickness for the 2D-3D transition is about two monolayers. The photoluminescence peak energies from the QDs were found to depend strongly on the InAs coverage, and the emission wavelength can be controlled over the 1.3-1.55 mum range. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：142 / 146

页数：5

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