A 14-transistor low power high-speed full adder cell

被引:0
|
作者
Khatibzadeh, AA [1 ]
Raahemifar, K [1 ]
机构
[1] Ryerson Univ, Dept Elect & Comp Engn, Toronto, ON M5B 2K3, Canada
关键词
full adder; low power; high-speed;
D O I
暂无
中图分类号
TP18 [人工智能理论];
学科分类号
081104 ; 0812 ; 0835 ; 1405 ;
摘要
This paper describes the design of a high-speed low-power 1-bit full adder cell. The main design objectives for this adder circuit are low power consumption and higher speed at low supply voltage. Using pseudo-NMOS together with two inverters this adder cell has been designed in 0.18-mu CMOS process. Considering transistor chaining, grouping, and signal sequencing in our proposed adder layout which all have noticeable impacts on the circuit performance, shows substantial power saving and speed improvement at no area penalty. Inverters act as drivers. Therefore, each stage will not suffer degradation in its deriving capabilities. This saves power, area, and time. This adder cell in 0.18-mu CMOS process has an average delay time of 0.077ns. It also exhibits low average power dissipation of 0.156x10(-3) watt at frequency equal to 4GHz. The proposed full adder circuit has shown to provide superior performance.
引用
收藏
页码:163 / 166
页数:4
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