Numerical simulation of the time-resolved surface photovoltage at Si-SiO2 interfaces

被引：0

作者：

Kirilov, K ^{[1
]}

Germanova, K ^{[1
]}

Donchev, V ^{[1
]}

Ivanov, T ^{[1
]}

机构：

[1] Univ Sofia, Fac Phys, Sofia 1164, Bulgaria

来源：

JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS | 2005年 / 7卷 / 01期

关键词：

surface photovoltage; time-resolved; numerical simulation; interface states;

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present a simple original algorithm for numerical simulation of super-bandgap SPV transients in semiconductors. It is applied to a p-Si/SiO2 interface with quasi-continuously distributed non-interacting interface states. The simulated SPV time dependence is compared with experimental results, and a reasonable agreement is found.

引用

页码：529 / 532

页数：4

共 50 条

[41] NONUNIFORM LATERAL IONIC IMPURITY DISTRIBUTIONS AT SI-SIO2 INTERFACES
SILVERSMITH, DJ
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (11) : 1589 - +
[42] THEORY OF CONTINUOUSLY DISTRIBUTED TRAP STATES AT SI-SIO2 INTERFACES
SAKURAI, T
SUGANO, T
JOURNAL OF APPLIED PHYSICS, 1981, 52 (04) : 2889 - 2896
[43] NEW PARAMAGNETIC CENTERS AT SI-SIO2 INTERFACES BY PHOTOCONDUCTIVE RESONANCE
MENDZ, G
HANEMAN, D
SOLID STATE COMMUNICATIONS, 1980, 33 (06) : 657 - 661
[44] ELECTRONIC-STRUCTURE O MODEL SI-SIO2 INTERFACES
HERMAN, F
HENDERSON, DJ
KASOWSKI, RV
BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1980, 25 (03): : 304 - 304
[45] SURFACE-STATE GENERATION DURING STRESS AGING OF HCL THERMAL SI-SIO2 INTERFACES
CHAUDHARI, PK
BHATTACHARYYA, A
BEYAR, DC
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (03) : C89 - C89
[46] Surface roughness at the Si-SiO2 interfaces in fully depleted silicon-on-insulator inversion layers
Gámiz, F
Roldán, JB
López-Villanueva, JA
Cartujo-Cassinello, P
Carceller, JE
JOURNAL OF APPLIED PHYSICS, 1999, 86 (12) : 6854 - 6863
[47] Third and fourth harmonic generation at Si-SiO2 interfaces and in Si-SiO2-Cr MOS structures
Kempf, RW
Wilson, PT
Canterbury, JD
Mishina, ED
Aktsipetrov, OA
Downer, MC
APPLIED PHYSICS B-LASERS AND OPTICS, 1999, 68 (03): : 325 - 332
[48] INFLUENCE OF SURFACE-ROUGHNESS ON THE ELECTRICAL-PROPERTIES OF SI-SIO2 INTERFACES AND ON 2ND-HARMONIC GENERATION AT THESE INTERFACES
BJORKMAN, CH
YASUDA, T
SHEARON, CE
MA, Y
LUCOVSKY, G
EMMERICHS, U
MEYER, C
LEO, K
KURZ, H
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1993, 11 (04): : 1521 - 1527
[49] Third and fourth harmonic generation at Si-SiO2 interfaces and in Si-SiO2-Cr MOS structures
R.W. Kempf
P.T. Wilson
J.D. Canterbury
E.D. Mishina
O.A. Aktsipetrov
M.C. Downer
Applied Physics B, 1999, 68 : 325 - 332
[50] Ultrafast time-resolved spectroscopy of Si nanocrystals embedded in SiO2 matrix
Lioudakis, Emmanouil
Emporas, Alexandros
Othonos, Andreas
Nassiopoulou, A. G.
JOURNAL OF ALLOYS AND COMPOUNDS, 2009, 483 (1-2) : 597 - 599

← 1 2 3 4 5 →