Third and fourth harmonic generation at Si-SiO2 interfaces and in Si-SiO2-Cr MOS structures

被引：0

作者：

R.W. Kempf

P.T. Wilson

J.D. Canterbury

E.D. Mishina

O.A. Aktsipetrov

M.C. Downer

机构：

[1] Department of Physics,

[2] The University of Texas at Austin,undefined

[3] Austin,undefined

[4] TX 78712,undefined

[5] USA,undefined

[6] Department of Physics,undefined

[7] Moscow State University,undefined

[8] Moscow 119899,undefined

[9] Russia,undefined

来源：

Applied Physics B | 1999年 / 68卷

关键词：

PACS: 75.70.Ak; 75.70.Cn; 42.65;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

and Si(110)-SiO2 interfaces and DC-electric-field induced TH and FH generation is then observed in Si(111)-SiO2-Cr and Si(110)-SiO2-Cr MOS structures for the first time. A systematic phenomenological analysis of azimuthal anisotropy of TH and FH generation intensity is performed for (111) and (110) surfaces of Oh symmetric single crystals. A phenomenological model of electro-induced effects in TH and FH generation is then developed and the surface specificity and sensitivity of TH and FH generation are discussed. Optical interference of surface electro-induced and bulk bias-independent contributions to the effective third-order nonlinear polarization is proposed as the mechanism underlying surface sensitivity of electro-modulated TH probe.

引用

页码：325 / 332

页数：7

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