Radiation effects of floating-gate (FG) and charge-trapping (CT) Flash memory technologies

被引：5
|
作者：
Bi, Jinshun [1 ]
机构：
[1] Chinese Acad Sci, Inst Microelect, Beijing, Peoples R China
来源：
17TH IEEE INTERNATIONAL CONFERENCE ON IC DESIGN AND TECHNOLOGY (ICICDT 2019) | 2019年
基金：
中国国家自然科学基金;
关键词：
total ionizing dose; gamma ray; SONOS; floating gate; Flash;
D O I：
10.1109/icicdt.2019.8790893
中图分类号：
TP [自动化技术、计算机技术];
学科分类号：
0812 ;
摘要：
The Co-60-gamma ray total ionizing dose (TID) radiation responses of 55 nm SONOS (Silicon-Oxide-Nitride-Oxide-Silicon) memory cells and 65 nm FG memory cells are investigated. The threshold voltage (Vth) and off-state leakage current (I-off) of memory cells are measured before and after radiation, respectively. The physical mechanisms of charge loss process are analyzed to explain experiment results.
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页数：3
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