Optical Properties of Perovskite-Organic Multiple Quantum Wells

被引：13
|
作者：
Antrack, Tobias [1 ,2 ]
Kroll, Martin [1 ,2 ]
Sudzius, Markas [1 ,2 ]
Cho, Changsoon [1 ,2 ]
Imbrasas, Paulius [1 ,2 ]
Albaladejo-Siguan, Miguel [1 ,2 ]
Benduhn, Johannes [1 ,2 ]
Merten, Lena [3 ]
Hinderhofer, Alexander [3 ]
Schreiber, Frank [3 ]
Reineke, Sebastian [1 ,2 ]
Vaynzof, Yana [1 ,2 ]
Leo, Karl [1 ,2 ]
机构：
[1] Tech Univ Dresden, Dresden Integrated Ctr Appl Phys & Photon Mat IAP, Nothnitzer Str 61, D-01187 Dresden, Germany
[2] Tech Univ Dresden, Inst Appl Phys, Nothnitzer Str 61, D-01187 Dresden, Germany
[3] Univ Tubingen, Inst Angew Phys, Morgenstelle 10, D-72076 Tubingen, Germany
来源：
ADVANCED SCIENCE | 2022年 / 9卷 / 24期
关键词：
amplified spontaneous emission; confinement; luminescence; perovskite; quantum well; simulation; vacuum deposition; X-ray reflectivity; SPONTANEOUS EMISSION; EFFICIENT; CSPBBR3;
D O I：
10.1002/advs.202200379
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
A comprehensive study of the optical properties of CsPbBr3 perovskite multiple quantum wells (MQW) with organic barrier layers is presented. Quantum confinement is observed by a blue-shift in absorption and emission spectra with decreasing well width and agrees well with simulations of the confinement energies. A large increase of emission intensity with thinner layers is observed, with a photoluminescence quantum yield up to 32 times higher than that of bulk layers. Amplified spontaneous emission (ASE) measurements show very low thresholds down to 7.3 mu J cm(-2) for a perovskite thickness of 8.7 nm, significantly lower than previously observed for CsPbBr3 thin-films. With their increased photoluminescence efficiency and low ASE thresholds, MQW structures with CsPbBr3 are excellent candidates for high-efficiency perovskite-based LEDs and lasers.
引用
收藏
页数：7
相关论文
共 50 条
  • [31] Influence of stress on the optical properties of double InGaN/GaN multiple quantum wells
    Peng, Ruoshi
    Xu, Shengrui
    Zhang, Jinfeng
    Zhang, Jincheng
    Du, Jinjuan
    Zhao, Ying
    Fan, Xiaomeng
    Hao, Yue
    OPTICAL MATERIALS EXPRESS, 2018, 8 (06): : 1528 - 1535
  • [32] GROWTH, OPTICAL, AND OPTOELECTRONIC PROPERTIES OF CDZNTE/ZNTE MULTIPLE QUANTUM-WELLS
    FELDMAN, RD
    LEE, D
    PARTOVI, A
    STANLEY, RP
    JOHNSON, AM
    ZUCKER, JE
    GLASS, AM
    HEGARTY, J
    CRITICAL REVIEWS IN SOLID STATE AND MATERIALS SCIENCES, 1992, 17 (05) : 477 - 506
  • [33] Improvement of optical properties of InGaN-based red multiple quantum wells
    Hou, Xin
    Yang, Tao
    Fan, Shao-Sheng
    Xu, Haun
    Iida, Daisuke
    Liu, Yue-Jun
    Mei, Yang
    Weng, Guo-En
    Chen, Shao-Qiang
    Zhang, Bao-Ping
    Ohkawa, Kazuhiro
    OPTICS EXPRESS, 2023, 31 (11) : 18567 - 18575
  • [34] Effect of Temperature on Optical and Electronic Properties of InGaP/InGaAIP Multiple Quantum Wells
    You, J. H.
    Kim, D. H.
    Lee, D. U.
    Yoo, K. H.
    Park, C. Y.
    Park, K. W.
    Jang, S. J.
    Lee, Y. T.
    Kim, T. W.
    JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2012, 12 (07) : 5843 - 5846
  • [35] Structural and optical properties of GaN/AlN multiple quantum wells for intersubband applications
    Liu, XY
    Fälth, JF
    Andersson, TG
    Holmström, P
    Jänes, P
    Ekenberg, U
    Thylén, L
    JOURNAL OF CRYSTAL GROWTH, 2005, 278 (1-4) : 397 - 401
  • [36] Effect of microstructural evolution on optical properties of InGaN/GaN multiple quantum wells
    Lin, Yen-Sheng
    Lin, Kun-Hong
    Wu, Chen-Hung
    Feng, Shih-Wei
    Kuo, Ho-Hung
    2009 14TH OPTOELECTRONICS AND COMMUNICATIONS CONFERENCE (OECC 2009), 2009, : 426 - +
  • [37] Impact of Al interdiffusion on optical properties in GaSb/AlGaSb multiple quantum wells
    Lomascolo, M.
    Giugno, P.V.
    Cingolani, R.
    Gerardi, C.
    Leroux, M.
    Massies, J.
    Physica E: Low-Dimensional Systems and Nanostructures, 1998, 2 (1-4): : 102 - 105
  • [38] Magnetic field dependence optical properties of GaN/AlN multiple quantum wells
    Solaimani, M.
    Morteza, Izadifard
    Arabshahi, H.
    Reza, Sarkardei Mohammad
    OPTIK, 2013, 124 (18): : 3194 - 3197
  • [39] Optical and structural properties of GeSn/SiGeSn multiple quantum wells for infrared optoelectronics
    Olorunsola, Oluwatobi
    Stanchu, Hryhorii
    Ojo, Solomon
    Wangila, Emmanuel
    Said, Abdulla
    Zamani-Alavijeh, Mohammad
    Salamo, Gregory
    Yu, Shui-Qing
    JOURNAL OF CRYSTAL GROWTH, 2022, 588
  • [40] Optical Properties of GaN Nanorods Containing a Single or Multiple InGaN Quantum Wells
    Zhuang, Yi D.
    Lis, Szymon
    Bruckbauer, Jochen
    O'Kane, Simon E. J.
    Shields, Philip A.
    Edwards, Paul R.
    Sarma, Jayanta
    Martin, Robert W.
    Allsopp, Duncan W. E.
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2013, 52 (08)
12345