Effect of microstructural evolution on optical properties of InGaN/GaN multiple quantum wells

被引：0
|
作者：
Lin, Yen-Sheng [1 ]
Lin, Kun-Hong [1 ]
Wu, Chen-Hung [1 ]
Feng, Shih-Wei [2 ]
Kuo, Ho-Hung [3 ]
机构：
[1] I Shou Univ, Dept Elect Engn, Kaohsiung 840, Taiwan
[2] Natl Univ Kaohsiung, Dept Appl Phys, Kaohsiung 811, Taiwan
[3] UVat Co Ltd, Dept Res & Design, Taichung, Taiwan
来源：
2009 14TH OPTOELECTRONICS AND COMMUNICATIONS CONFERENCE (OECC 2009) | 2009年
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D O I：
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The microstructure variations with various well thickness of InGaN/GaN MQWs were demonstrated. In 2 nm well thickness, QDs were better confined near the designated QWs layers and might resulted in a higher radiative efficiency due to the less strain energy.
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页码：426 / +
页数：2
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