Cathodoluminescence studies of Cu(In,Ga)Se2 thin-films

被引：2
|
作者：
Ott, N
Hanna, G
Albrecht, M
Rau, U
Werner, JH
Strunk, HP
机构：
[1] Univ Erlangen Nurnberg, Lehrstuhl Mikrocharakterisierung, Inst Werkstoffwissensch, D-91058 Erlangen, Germany
[2] Univ Stuttgart, Inst Phys Elekt, D-70569 Stuttgart, Germany
来源：
POLYCRYSTALLINE SEMICONDUCTORS VII, PROCEEDINGS | 2003年 / 93卷
关键词：
cathodoluminescence; Cu(In; Ga)Se-2; transmission electron microscopy;
D O I：
10.4028/www.scientific.net/SSP.93.133
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We investigate the microstructure of Cu(In,Ga)Se-2 thin films. The absorber layers are grown by coevaporation of the constituent elements according to the three-stage process. They have different sodium contents and sodium sources, leading to different preferred grain orientations. A transmission electron microscope equipped with a cathodoluminescence spectrometer serves to analyze the electronic behavior of grain boundaries and structural defects. Contrasts in panchromatic cathodoluminescence images at grain boundaries and structural defects indicate an enhanced nonradiative recombination of charge carriers localized at these defects.
引用
收藏
页码：133 / 138
页数：6
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