High-Performance a-IGZO Thin-Film Transistor Using Ta2O5 Gate Dielectric

被引：152
|
作者：
Chiu, C. J. [1 ,2 ]
Chang, S. P. [1 ,2 ]
Chang, S. J. [1 ,2 ]
机构：
[1] Natl Cheng Kung Univ, Inst Microelect, Tainan 70101, Taiwan
[2] Natl Cheng Kung Univ, Dept Elect Engn, Adv Optoelect Technol Ctr, Ctr Micro Nano Sci & Technol, Tainan 70101, Taiwan
来源：
IEEE ELECTRON DEVICE LETTERS | 2010年 / 31卷 / 11期
关键词：
Amorphous indium gallium zinc oxide (a-IGZO); high-k; Ta2O5; thin-film transistor (TFT);
D O I：
10.1109/LED.2010.2066951
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this letter, we report the fabrication of an amorphous indium gallium zinc oxide (a-IGZO) thin-film transistor with a high-k dielectric layer on a glass substrate. The room-temperature-deposited a-IGZO channel with Ta2O5 exhibits the following operating characteristics: a threshold voltage of 0.25 V, a drain-source current on/off ratio of 10(5), a subthreshold gate voltage swing of 0.61 V/decade, and a high field-effect mobility of 61.5 cm(2)/V . s; these characteristics make it suitable for use as a switching transistor and in low-power applications.
引用
收藏
页码：1245 / 1247
页数：3
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