Amorphous IGZO Nonvolatile Memory Thin Film Transistors Using Ta2O5 Gate Dielectric

被引：0
|
作者：
Chiu, C. J. [1 ]
Chang, S. P.
Weng, W. Y.
Chang, S. J.
机构：
[1] Natl Cheng Kung Univ, Inst Microelect, Ctr Micro Nano Sci & Technol, Adv Optoelect Technol Ctr, Tainan 70101, Taiwan
来源：
NANOTECHNOLOGY AND ADVANCED MATERIALS | 2012年 / 486卷
关键词：
amorphous indium gallium zinc oxide (a-IGZO); Ta2O5; thin film transistor; nonvolatile memory;
D O I：
10.4028/www.scientific.net/AMR.486.233
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
A nonvolatile memory thin-film transistor (MTFT) using an amorphous indium gallium zinc oxide (a-IGZO) semiconducting channel and a Ta2O5 gate insulator is proposed. The high-dielectric-constant material Ta2O5 was deposited by e-beaming and used for the charge storage layer, i.e., a metal-oxide-semiconductor (MOS) capacitor. We obtained memory windows (Delta Vth = 2 V) at 3-V gate voltage and realized reliable memory operations. Therefore, a-IGZO TFT with Ta2O5 can be employed in integrated high-performance nonvolatile memory devices for applications to transparent displays and flexible electronic devices.
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页码：233 / +
页数：2
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