Low-Intensity UV light sensor based on p-NiO/n-Si heterojunction

被引:19
|
作者
Al-Hardan, Naif H. [1 ]
Ahmed, Naser M. [1 ]
Almessiere, Munirah A. [2 ,3 ]
Aziz, Azlan Abdul [1 ]
机构
[1] Univ Sains Malaysia, Sch Phys, Usm 11800, Penang, Malaysia
[2] Imam Abdulrahman Bin Faisal Univ, Dept Phys, Coll Sci, Dammam, Saudi Arabia
[3] Imam Abdulrahman Bin Faisal Univ, IRMC, Dept Nanomed Res, POB 1982, Dammam 31441, Saudi Arabia
关键词
NiO thin film; oxidation process; p-n junction; UV photodetectors; PHOTORESPONSE PROPERTIES; OXIDE SEMICONDUCTORS; THIN-FILMS; FABRICATION; PHOTODETECTORS; PERFORMANCE; RADIATION;
D O I
10.1088/2053-1591/ab5dfc
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We studied the performance of a photodiode UV sensor based on a p-NiO/n-Si heterojunction. NiO thin film was prepared via a two-step process. In the first step, a thin film of Ni metal was evaporated on an n-Si substrate. Subsequently, the sample was thermally oxidized at 500 degrees C for 3 h in an ambient atmosphere. The phases and surface morphology of the prepared sample was determined by using x-ray diffraction analysis and scanning electron microscopy, respectively. The rectifying ratio of the prepared device was approximately 7 at a bias voltage of +/- 10 V, with a barrier height and ideality factor of 0.77 +/- 0.03 eV and 16, respectively. The prepared device was tested for potential applications as a UV sensor. The prepared device exhibits high repeatability and fast response times of 1.5 s and 0.7 s for the rise and full time, respectively. The prepared photodiode responds to low-intensity UV light in the range from 30 mu W.cm(-2) to 430 mu W.cm(-2).
引用
收藏
页数:10
相关论文
共 50 条
  • [41] Fabrication and Characterization of p-NiO/n-ZnO Heterojunction Towards Transparent Diode
    Grochowski, J.
    Guziewicz, M.
    Kruszka, R.
    Borysiewicz, M.
    Kopalko, K.
    Piotrowska, A.
    2012 35TH INTERNATIONAL SPRING SEMINAR ON ELECTRONICS TECHNOLOGY (ISSE 2012): POWER ELECTRONICS, 2012, : 488 - 491
  • [42] Optically transparent of n-ZnO/p-NiO heterojunction for ultraviolet photodetector application
    Tsai, Shu-Yi
    Hon, Min-Hsiung
    Lu, Yang-Ming
    FUNCTIONAL AND ELECTRONIC MATERIALS, 2011, 687 : 711 - +
  • [43] Fabrication of an efficient GLAD-assisted p-NiO nanorod/n-ZnO thin film heterojunction UV photodiode
    Tyagi, Manisha
    Tomar, Monika
    Gupta, Vinay
    JOURNAL OF MATERIALS CHEMISTRY C, 2014, 2 (13) : 2387 - 2393
  • [44] Low leakage p-NiO/i-ZnO/n-ITO heterostructure ultraviolet sensor
    Vygranenko, Yuriy
    Wang, Kai
    Nathan, Arokia
    APPLIED PHYSICS LETTERS, 2006, 89 (17)
  • [45] Manipulating the structure of polyaniline by exploiting redox chemistry: Novel p-NiO/n-polyaniline/n-Si Schottky diode based chemosensor for the electrochemical detection of hydrazinobenzene
    Ameen, Sadia
    Akhtar, M. Shaheer
    Shin, Hyung Shik
    ELECTROCHIMICA ACTA, 2016, 215 : 200 - 211
  • [46] Visible and ultraviolet light alternative photodetector based on ZnO nanowire/n-Si heterojunction
    Guo, Zhen
    Zhao, Dongxu
    Liu, Yichun
    Shen, Dezhen
    Zhang, Jiying
    Li, Binghui
    APPLIED PHYSICS LETTERS, 2008, 93 (16)
  • [47] Impedimetric-type NO2 sensor based on the p-NiO/n-NiNb2O6 heterojunction sensing electrode
    Meng, Weiwei
    Tian, Meng
    Dai, Lei
    Wang, Ling
    Liu, Yongguang
    Zhou, Huizhu
    He, Zhangxing
    Li, Yuehua
    SENSORS AND ACTUATORS B-CHEMICAL, 2022, 371
  • [48] Fabrication and characteristics of double heterojunction bipolar transistor based on p-CuO/n-Si heterojunction
    Milad Yousefizad
    Mohammad Mahdi Ghezelayagh
    Shiva Hooshmand
    Farshid Raissi
    Applied Nanoscience, 2022, 12 : 3637 - 3645
  • [49] Fabrication and characteristics of double heterojunction bipolar transistor based on p-CuO/n-Si heterojunction
    Yousefizad, Milad
    Ghezelayagh, Mohammad Mahdi
    Hooshmand, Shiva
    Raissi, Farshid
    APPLIED NANOSCIENCE, 2022, 12 (11) : 3637 - 3645
  • [50] Thickness effect of NiO on the performance of ultraviolet sensors with p-NiO/n-ZnO nanowire heterojunction structure
    Li, Yu-Ren
    Wan, Chung-Yun
    Chang, Chia-Tsung
    Tsai, Wan-Lin
    Huang, Yu-Chih
    Wang, Kuang-Yu
    Yang, Po-Yu
    Cheng, Huang-Chung
    VACUUM, 2015, 118 : 48 - 54