Low-Intensity UV light sensor based on p-NiO/n-Si heterojunction

被引:19
|
作者
Al-Hardan, Naif H. [1 ]
Ahmed, Naser M. [1 ]
Almessiere, Munirah A. [2 ,3 ]
Aziz, Azlan Abdul [1 ]
机构
[1] Univ Sains Malaysia, Sch Phys, Usm 11800, Penang, Malaysia
[2] Imam Abdulrahman Bin Faisal Univ, Dept Phys, Coll Sci, Dammam, Saudi Arabia
[3] Imam Abdulrahman Bin Faisal Univ, IRMC, Dept Nanomed Res, POB 1982, Dammam 31441, Saudi Arabia
关键词
NiO thin film; oxidation process; p-n junction; UV photodetectors; PHOTORESPONSE PROPERTIES; OXIDE SEMICONDUCTORS; THIN-FILMS; FABRICATION; PHOTODETECTORS; PERFORMANCE; RADIATION;
D O I
10.1088/2053-1591/ab5dfc
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We studied the performance of a photodiode UV sensor based on a p-NiO/n-Si heterojunction. NiO thin film was prepared via a two-step process. In the first step, a thin film of Ni metal was evaporated on an n-Si substrate. Subsequently, the sample was thermally oxidized at 500 degrees C for 3 h in an ambient atmosphere. The phases and surface morphology of the prepared sample was determined by using x-ray diffraction analysis and scanning electron microscopy, respectively. The rectifying ratio of the prepared device was approximately 7 at a bias voltage of +/- 10 V, with a barrier height and ideality factor of 0.77 +/- 0.03 eV and 16, respectively. The prepared device was tested for potential applications as a UV sensor. The prepared device exhibits high repeatability and fast response times of 1.5 s and 0.7 s for the rise and full time, respectively. The prepared photodiode responds to low-intensity UV light in the range from 30 mu W.cm(-2) to 430 mu W.cm(-2).
引用
收藏
页数:10
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