Impact of Substrate Miscut Angle on Surface Morphology and Electrical Properties of Homoepitaxial β-Ga2O3 Grown by MOVPE

被引：0
|
作者：
Bin Anooz, Saud [1 ]
Popp, Andreas [1 ]
Grueneberg, Raimund [1 ]
Fiedler, Andreas [1 ]
Irmscher, Klaus [1 ]
Schewski, Robert [1 ]
Albrecht, Martin [1 ]
Galazka, Zbigniew [1 ]
Wagner, Guenter [1 ]
机构：
[1] Leibniz Inst Kristallzuchtung, Berlin, Germany
来源：
2019 COMPOUND SEMICONDUCTOR WEEK (CSW) | 2019年
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TM [电工技术]; TN [电子技术、通信技术];
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0808 ; 0809 ;
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