Impact of Substrate Miscut Angle on Surface Morphology and Electrical Properties of Homoepitaxial β-Ga2O3 Grown by MOVPE

被引：0
|
作者：
Bin Anooz, Saud [1 ]
Popp, Andreas [1 ]
Grueneberg, Raimund [1 ]
Fiedler, Andreas [1 ]
Irmscher, Klaus [1 ]
Schewski, Robert [1 ]
Albrecht, Martin [1 ]
Galazka, Zbigniew [1 ]
Wagner, Guenter [1 ]
机构：
[1] Leibniz Inst Kristallzuchtung, Berlin, Germany
来源：
2019 COMPOUND SEMICONDUCTOR WEEK (CSW) | 2019年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页数：1
相关论文
共 50 条
  • [31] Optical Properties of Mist CVD Grown α-Ga2O3
    Ul Muazzam, Usman
    Chavan, Prasad
    Raghavan, Srinivasan
    Muralidharan, Rangarajan
    Nath, Digbijoy N.
    IEEE PHOTONICS TECHNOLOGY LETTERS, 2020, 32 (07) : 422 - 425
  • [32] Electrical properties of Si doped Ga2O3 films grown by pulsed laser deposition
    Zhang, Fabi
    Saito, Katsuhiko
    Tanaka, Tooru
    Nishio, Mitsuhiro
    Guo, Qixin
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2015, 26 (12) : 9624 - 9629
  • [33] Growth temperature dependences of structural and electrical properties of Ga2O3 epitaxial films grown on β-Ga2O3 (010) substrates by molecular beam epitaxy
    Sasaki, Kohei
    Higashiwaki, Masataka
    Kuramata, Akito
    Masui, Takekazu
    Yamakoshi, Shigenobu
    JOURNAL OF CRYSTAL GROWTH, 2014, 392 : 30 - 33
  • [34] Optical and electrical properties of Ti-doped β-Ga2O3 (Ti3+:β-Ga2O3) bulk crystals grown by floating zone method
    Wang, Buguo
    Look, David
    Farlow, Gary
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2020, 53 (44)
  • [35] Machine learning supported analysis of MOVPE grown β-Ga2O3 thin films on sapphire
    Chou, Ta-Shun
    Bin Anooz, Saud
    Grueneberg, Raimund
    Dropka, Natasha
    Miller, Wolfram
    Tran, Thi Thuy Vi
    Rehm, Jana
    Albrecht, Martin
    Popp, Andreas
    JOURNAL OF CRYSTAL GROWTH, 2022, 592
  • [36] Investigation of Enhanced Heteroepitaxy and Electrical Properties in κ-Ga2O3 Due to Interfacing with β-Ga2O3 Template Layers
    Lee, Junhee
    Gautam, Lakshay
    Teherani, Ferechteh H.
    Sandana, Eric V.
    Bove, Philippe
    Rogers, David J.
    Razeghi, Manijeh
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2023, 220 (08):
  • [37] β-Ga2O3 MOSFETs electrical characteristic study of various etching depths grown on sapphire substrate by MOCVD
    Chan-Hung Lu
    Fu-Gow Tarntair
    Yu-Cheng Kao
    Niall Tumilty
    Jia-Min Shieh
    Shao-Hui Hsu
    Ching-Lien Hsiao
    Ray-Hua Horng
    Discover Nano, 18
  • [38] β-Ga2O3 MOSFETs electrical characteristic study of various etching depths grown on sapphire substrate by MOCVD
    Lu, Chan-Hung
    Tarntair, Fu-Gow
    Kao, Yu-Cheng
    Tumilty, Niall
    Shieh, Jia-Min
    Hsu, Shao-Hui
    Hsiao, Ching-Lien
    Horng, Ray-Hua
    DISCOVER NANO, 2023, 18 (01)
  • [39] Preparation and electrical properties of ultrafine Ga2O3 nanowires
    Huang, Y
    Yue, SL
    Wang, ZL
    Wang, Q
    Shi, CY
    Xu, Z
    Bai, XD
    Tang, CC
    Gu, CZ
    JOURNAL OF PHYSICAL CHEMISTRY B, 2006, 110 (02): : 796 - 800
  • [40] Depletion-mode vertical Ga2O3 trench MOSFETs fabricated using Ga2O3 homoepitaxial films grown by halide vapor phase epitaxy
    Sasaki, Kohei
    Thieu, Quang Tu
    Wakimoto, Daiki
    Koishikawa, Yuki
    Kuramata, Akito
    Yamakoshi, Shigenobu
    APPLIED PHYSICS EXPRESS, 2017, 10 (12)
12345