Bipolar resistive switching and charge transport in silicon oxide memristor

被引：69

作者：

Mikhaylov, Alexey N. ^{[1
]}

Belov, Alexey I. ^{[1
]}

Guseinov, Davud V. ^{[1
]}

Korolev, Dmitry S. ^{[1
]}

Antonov, Ivan N. ^{[1
]}

Efimovykh, Denis V. ^{[1
]}

Tikhov, Stanislav V. ^{[1
]}

Kasatkin, Alexander P. ^{[1
]}

Gorshkov, Oleg N. ^{[1
]}

Tetelbaum, David I. ^{[1
]}

Bobrov, Alexander I. ^{[1
]}

Malekhonova, Natalia V. ^{[1
]}

Pavlov, Dmitry A. ^{[1
]}

Gryaznov, Evgeny G. ^{[1
,2
]}

Yatmanov, Alexander P. ^{[2
]}

机构：

[1] Lobachevsky State Univ Nizhni Novgorod, Nizhnii Novgorod 603950, Russia

[2] Sedakov Sci Res Inst, GSP 486, Nizhnii Novgorod 603950, Russia

来源：

MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS | 2015年 / 194卷

关键词：

Memristor; Silicon oxide; Magnetron sputtering; Resistive switching; Charge transport; Admittance spectroscopy; ROOM-TEMPERATURE; FILMS; SIO2; RESISTANCE;

D O I：

10.1016/j.mseb.2014.12.029

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Reproducible bipolar resistive switching has been studied in SiOx-based thin-film memristor structures deposited by magnetron sputtering technique on the TiN/Ti metalized SiO2/Si substrates. It is established that, after electroforming, the structure can be switched between the quasi-ohmic low-resistance state related to silicon chains (conducting filaments) and the high-resistance state with semiconductor-like hopping mechanism of charge transport through the defects in silicon oxide. The switching parameters are determined by a balance between the reduction and oxidation processes that, in turn, are driven by the value and polarity of voltage bias, current, temperature and device environment. The results can be used for the development of silicon-based nonvolatile memory and memristive systems as a key component of future electronics. (C) 2015 Elsevier B.V. All rights reserved.

引用

页码：48 / 54

页数：7

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