Regenerable Resistive Switching in Silicon Oxide Based Nanojunctions

被引：51
|
作者：
Cavallini, Massimiliano [1 ]
Hemmatian, Zahra [1 ]
Riminucci, Alberto [1 ]
Prezioso, Mirko [1 ]
Morandi, Vittorio [2 ]
Murgia, Mauro [1 ]
机构：
[1] CNR ISMN, I-40129 Bologna, Italy
[2] CNR IMM, I-40129 Bologna, Italy
来源：
ADVANCED MATERIALS | 2012年 / 24卷 / 09期
关键词：
nanodevices; surface modification; resistive switching; resistive memory; nanolithography; MEMORIES; NANOLITHOGRAPHY; TEMPLATES; MEMRISTOR; ELEMENT; FILMS;
D O I：
10.1002/adma.201104301
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
A nanomemristor based on SiO 2 is fabricated in situ with spatial control at the nanoscale. The proposed system exhibits peculiar properties such as the possibility to be regenerated after being stressed or damaged and the possibility to expose the metal and the oxide interfaces by removing the top electrodes. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码：1197 / 1201
页数：5
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