Modification of the exchange bias effect by He ion irradiation

被引：25

作者：

Mougin, A ^{[1
]}

Mewes, T ^{[1
]}

Lopusnik, R ^{[1
]}

Jung, M ^{[1
]}

Engel, D ^{[1
]}

Ehresmann, A ^{[1
]}

Schmoranzer, H ^{[1
]}

Fassbender, J ^{[1
]}

Hillebrands, B ^{[1
]}

机构：

[1] Univ Kaiserslautern, Fachbereich Phys & Forsch & Entwicklungsschwerpun, D-67663 Kaiserslautern, Germany

来源：

IEEE TRANSACTIONS ON MAGNETICS | 2000年 / 36卷 / 05期

关键词：

exchange bias; interface intermixing; ion irradiation; pinning;

D O I：

10.1109/20.908547

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

FeNi/FeMn exchange bias samples with a Large exchange bias field at room temperature have been prepared, Upon irradiation with He ions, both the exchange bias field and the coercive field are modified. For low ion doses the exchange bias field is enhanced by about 70%, Above a threshold dose of 0.3.10(15) ions/cm(2), the exchange bias field decreases continuously as the ion dose increases, The observed modifications can be explained in terms of defect creation acting as pinning sites for domain walls and atomic intermixing.

引用

页码：2647 / 2649

页数：3

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