Ion irradiation effects on the exchange bias in IrMn/Co films

被引：23
|
作者：
Schafer, D. [1 ]
Grande, P. L. [1 ]
Pereira, L. G. [1 ]
Geshev, J. [1 ]
机构：
[1] Univ Fed Rio Grande do Sul, Inst Fis, BR-91501970 Porto Alegre, RS, Brazil
来源：
JOURNAL OF APPLIED PHYSICS | 2011年 / 109卷 / 02期
关键词：
MAGNETIC-ANISOTROPY; MECHANISM; SYSTEMS; LAYER;
D O I：
10.1063/1.3532044
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The present work reports on the influence of ion irradiation in exchange-coupled bilayers. Magnetron-sputtered IrMn4/Co films were irradiated with 40 keV He+ ions and the dependence of their magnetic properties was studied as function of ion fluence and current used during the irradiations. The effects of ion damage and electronic excitation were also studied through additional irradiations with H+ and Ne+ ions. The results show a clear dependence of the exchange-bias field on the defects caused by the ion bombardment. No correlations with other irradiation effects were observed. (c) 2011 American Institute of Physics. [doi: 10.1063/1.3532044]
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页数：4
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