Exchange bias and negative magnetoresistance in [Co/Bi/Co]/IrMn thin films]

被引：0
|
作者：
Christides, C. [1 ]
Speliotis, Th [2 ]
机构：
[1] Univ Patras, Dept Engn Sci, Patras 26504, Greece
[2] NCSR Demokritos, Inst Mat Sci, Athens 15310, Greece
来源：
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 2010年 / 322卷 / 01期
关键词：
Magnetic multilayer; Magneto-transport effect; Galvanomagnetic effect; Magnetization curve; SPIN-DEPENDENT TRANSPORT; MAGNETOTRANSPORT PROPERTIES; BISMUTH; FILMS;
D O I：
10.1016/j.jmmm.2009.08.027
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The artificial control of grain-boundary resistance and its contribution to magnetic and magneto-transport properties in [Co(3 nm)/Bi(2.5 nm)/Co(3 nm)]Ir20Mn80(12 nm) thin films that exhibit exchange bias is studied. Transverse magnetoresistance (MR) loops exhibit a negative MR in thin films grown by magnetron sputtering on Si/SiNx(100 nm) substrates. This negative MR effect is of the giant-MR (GMR) type, although its magnitude is less than 1%. A considerable exchange bias (EB) effect is observed only at lower temperatures, where both, GMR and isothermal magnetization loops exhibit a shift of -600 Oe at 5 K. (C) 2009 Elsevier B.V. All rights reserved.
引用
收藏
页码：65 / 68
页数：4
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