New Advances on Heterogeneous Integration of III-V on Silicon

被引:32
|
作者
Duan, Guang-Hua [1 ]
Olivier, Segolene [2 ]
Malhouitre, Stephane [2 ]
Accard, Alain [1 ]
Kaspar, Peter [1 ]
de Valicourt, Guilhem [3 ]
Levaufre, Guillaume [1 ]
Girard, Nils [1 ]
Le Liepvre, Alban [1 ]
Shen, Alexandre [1 ]
Make, Dalila [1 ]
Lelarge, Francois [1 ]
Jany, Christophe [2 ]
Ribaud, Karen [2 ]
Mallecot, Franck [1 ]
Charbonnier, Philippe [1 ]
Gariah, Harry [1 ]
Kopp, Christophe [2 ]
Gentner, Jean-Louis [1 ]
机构
[1] III V Lab, F-91767 Palaiseau, France
[2] III V Lab, LETI, Minatec, F-38054 Grenoble, France
[3] Alcatel Lucent, Bell Labs, Holmdel, NJ 07733 USA
关键词
silicon photonics; photonic integrated circuit; hybrid integration; tunable laser; semiconductor optical amplifier; wafer bonding; optical network; packet switching; Directly modulated laser; NG-PON2; MODULATION BANDWIDTH; NEXT-GENERATION; LASERS;
D O I
10.1109/JLT.2014.2376174
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Recent advances on hybrid III-V/Si lasers and semiconductor optical amplifiers using wafer bonding are reported. Hybrid optical amplifiers exhibit 28 dB internal gain, 9 dBm saturation power in the output silicon waveguide, and 10-11 dB of internal noise factor. Moreover, using optical amplifiers as optical gates, we demonstrate a successful switching operation of optical packet/burst without penalties compared to classical optical amplifiers. The hybrid silicon lasers allow single mode operation and wavelength tunability over 30 nm by exploiting silicon ring resonators thermo-optical effect. Moreover transmission over 60 km single-mode fiber at 10 Gb/s from a directly modulated III-V on Silicon hybrid laser is also demonstrated. Finally, we achieved 21.4 Gb/s modulation over 12 wavelengths using a high-speed directly modulated silicon hybrid laser with improved E/O bandwidth.
引用
收藏
页码:976 / 983
页数:8
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