Heterogeneous III-V silicon photonic integration: components and characterization

被引：5

作者：

Zhang, Shang-jian ^{[1
]}

Liu, Yong ^{[1
]}

Lu, Rong-guo ^{[1
]}

Sun, Bao ^{[1
]}

Yan, Lian-shan ^{[2
]}

机构：

[1] Univ Elect Sci & Technol China, Sch Optoelect Sci & Engn, Chengdu 610054, Sichuan, Peoples R China

[2] Southwest Fiaotong Univ, Sch Informat Sci & Technol, Ctr Informat Photon & Commun, Chengdu 610031, Sichuan, Peoples R China

来源：

FRONTIERS OF INFORMATION TECHNOLOGY & ELECTRONIC ENGINEERING | 2019年 / 20卷 / 04期

基金：

中国国家自然科学基金;

关键词：

Heterogeneous photonic integration; Optical interconnection; On-wafer characterization; LASER; PHOTODIODES; CHIP;

D O I：

10.1631/FITEE.1800482

中图分类号：

TP [自动化技术、计算机技术];

学科分类号：

0812 ;

摘要：

Heterogeneous III-V silicon (Si) photonic integration is considered one of the key methods for realizing power- and cost-effective optical interconnections, which are highly desired for future high-performance computers and datacenters. We review the recent progress in heterogeneous III-V/Si photonic integration, including transceiving devices and components. We also describe the progress in the on-wafer characterization of photonic integration circuits, especially on the heterogeneous III-V/Si platform.

引用

页码：472 / 480

页数：9

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