Heterogeneous integration of III-V optoelectronic devices on silicon

被引：0

作者：

Van Thourhout, Dries ^{[1
]}

Roelkens, Gunther ^{[1
]}

Brouckaert, Joost ^{[1
]}

Komorowska, Katarzyna ^{[1
]}

Liu, Liu ^{[1
]}

Baets, Roel ^{[1
]}

Notzel, Richard ^{[2
]}

机构：

[1] Univ Ghent, IMEC, Dept Informat Technol, B-9000 Ghent, Belgium

[2] Eindhoven Univ Technol, Photon & Semicond Nanophys, Eindhoven, Netherlands

来源：

2008 IEEE 20TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM) | 2008年

关键词：

Silicon nanophotonics; heterogeneous integration; lasers; detectors;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Silicon has been proven to be an excellent platform for photonics. However, active functionality and in particular tight generation directly from silicon remains difficult Therefore we developed a die-to-wafer bonding based approach for integrating HI-V materials directly on silicon in a cost-effective way, which does not compromise the quality of the materials. In this paper we will illustrate the integration technology developed and several devices fabricated.

引用

页码：579 / +

页数：2

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