Sputter deposited c-oriented LiNbO3 thin films on SiO2

被引：51
|
作者：
Tan, S [1 ]
Gilbert, T [1 ]
Hung, CY [1 ]
Schlesinger, TE [1 ]
Migliuolo, M [1 ]
机构：
[1] KURT J LESKER CO,CLARION,PA
来源：
JOURNAL OF APPLIED PHYSICS | 1996年 / 79卷 / 07期
关键词：
D O I：
10.1063/1.361407
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We present the development of a magnetron sputtering process for the fabrication of exclusively c-axis oriented LiNbO3 thin films on silicon substrates. The heterostructure consists of LiNbO3/Si3N4/SiO2/Si. The deposition of the Si3N4 film is key to obtaining exclusively c-oriented LiNbO3 thin films. The deposition conditions for the LiNbO3 are discussed. (C) 1996 American Institute of Physics.
引用
收藏
页码：3548 / 3553
页数：6
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