Sputter deposited c-oriented LiNbO3 thin films on SiO2

被引：51

作者：

Tan, S ^{[1
]}

Gilbert, T ^{[1
]}

Hung, CY ^{[1
]}

Schlesinger, TE ^{[1
]}

Migliuolo, M ^{[1
]}

机构：

[1] KURT J LESKER CO,CLARION,PA

来源：

JOURNAL OF APPLIED PHYSICS | 1996年 / 79卷 / 07期

关键词：

D O I：

10.1063/1.361407

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present the development of a magnetron sputtering process for the fabrication of exclusively c-axis oriented LiNbO3 thin films on silicon substrates. The heterostructure consists of LiNbO3/Si3N4/SiO2/Si. The deposition of the Si3N4 film is key to obtaining exclusively c-oriented LiNbO3 thin films. The deposition conditions for the LiNbO3 are discussed. (C) 1996 American Institute of Physics.

引用

页码：3548 / 3553

页数：6

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