Nitride-based stacked laser diodes with a tunnel junction

被引：13
|
作者：
Okawara, Satoru [1 ]
Aoki, Yuta [1 ]
Kuwabara, Masakazu [1 ]
Takagi, Yasufumi [1 ]
Maeda, Junya [1 ]
Yoshida, Harumasa [1 ]
机构：
[1] Hamamatsu Photon KK, Hamamatsu, Shizuoka 4348601, Japan
来源：
APPLIED PHYSICS EXPRESS | 2018年 / 11卷 / 01期
关键词：
LIGHT-EMITTING-DIODES; GAN;
D O I：
10.7567/APEX.11.012701
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report on nitride-based two-stack laser diodes with a tunnel junction for the first time. The stacked laser diode was monolithically grown by metalorganic vapor phase epitaxy. It was confirmed that the two-stack InGaN/GaN multiple-quantum-well laser diode with an emission wavelength of 394 nm exhibited laser oscillation up to a peak output power of over 10 W in the pulsed current mode. The upper and lower emitters of the device were capable of lasing at different threshold currents of 2.4 and 5.2 A with different slope efficiencies of 0.8 and 0.3 W/A, respectively. (C) 2018 The Japan Society of Applied Physics
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页数：3
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